柴骏
讲师、博士
主要研究方向：半导体材料的第一性原理缺陷计算
个人履历：2013-2017上海大学，学士，无机非金属材料工程专业
2017-2022 中国科学院上海硅酸盐研究所，硕博连读，材料物理与化学专业
主要代表性研究成果：
1.Chai J, Ming C, Du X L, et al. Thermodynamics, kinetics and electronic properties of point defects in β-FeSi2 [J]. Physical Chemistry Chemical Physics, 2019, 21, 10497-10504.
2. Chai J, Zheng Z Y, Pan H, et al. Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective [J]. Physical Chemistry Chemical Physics, 2019, 21, 8721-8728.
3. Chai J, Shao Z W, Wang H, et al. Ultrafast processes in photochromic material YHxOy studied by excited-state density functional theory simulation [J], SCIENCE CHINA Materials, 2020, 63, 1579-1587.
4. Qiu P F, Cheng J, Chai J, et al. Exceptionally Heavy Doping Boosts the Performance of Iron Silicide for Refractory Thermoelectrics [J]. Advanced Energy Materials, 2022, 2200247.共一
5. Du X L, Qiu P F, Chai J, et al. Doubled Thermoelectric Figure of Merit in p-Type β-FeSi2 via Synergistically Optimizing Electrical and Thermal Transports [J]. ACS Applied Materials & Interface, 2020, 12, 12901-12909.
6. Wu X W, Gao W W, Chai J, et al. Defect tolerance in chalcogenide perovskite photovoltaic material BaZrS3 [J]. SCIENCE CHINA Materials, 2021 64, 2976–2986.
7. Wang Y, Lin A, Chai J, et al. First-principles design of Na-ion superionic conductors: Interstitial-based Na diffusion in NaCuZrS3 [J]. Chemistry-A European Journal, 2022, e202200234.
邮箱：chaijun@qzc.edu.cn
